DEEP LEVEL STUDY BY ANALYSIS OF THERMAL AND OPTICAL TRANSIENTS IN SEMICONDUCTOR JUNCTIONSVINCENT G.1980; APPL. PHYS.; ISSN 0340-3793; DEU; DA. 1980; VOL. 23; NO 2; PP. 215-221; BIBL. 18 REF.Article

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DETERMINATION DES NIVEAUX PROFONDS DANS LE SILICIUM DUS A L'IMPLANTATION D'IONS ARGON, PAR LA METHODE DES CARACTERISTIQUES V-FDABBASOVA RU; BOBROVA EA; GALKIN GN et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 3; PP. 448-452; BIBL. 9 REF.Article

SENSIBILITE DE PHOTODIODES S EN PRESENCE D'UN GRADIENT DE CONCENTRATION DES CENTRES PROFONDSADAMYAN ZN; ARUTYUNYAN VM; GASPARYAN FV et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 10; PP. 1879-1882; BIBL. 19 REF.Article

A NEW PLANAR INJECTION-GATED BULK SWITCHING DEVICE BASED UPON DEEP IMPURITY TRAPPINGKAPOOR AK; HENDERSON HT.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 7; PP. 1268-1274; BIBL. 11 REF.Article

AUTOMATIC CALIBRATION CIRCUIT FOR A DEEP LEVEL TRANSIENT SPECTROMETERTROXELL JR; WATKINS GD.1980; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1980; VOL. 51; NO 1; PP. 143-144; BIBL. 7 REF.Article

EFFECTS OF ION IMPLANTATION ON DEEP LEVELS IN GAASJERVIS TR; WOODARD DW; EASTMAN LF et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 20; PP. 619-621; BIBL. 6 REF.Article

TEMPERATURE DEPENDENCE OF THE OPTICAL IONIZATION ENERGY OF DEEP LOCAL LEVELS IN CDSE SINGLE CRYSTALSBAUBINAS R; SENULIS F; VAITKUS J et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 52; NO 2; PP. K143-K146; BIBL. 11 REF.Article

WHY MUONS AND PROTONS ARE DEEP DONORS IN SI AND GEALTARELLI M; HSU WY.1979; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1979; VOL. 43; NO 18; PP. 1346-1349; BIBL. 21 REF.Article

SPECTROSCOPIE DES NIVEAUX D'IMPURETE PROFONDS PAR UNE METHODE DE COMPENSATIONPRINTS V YA; BULATETSKIJ KG.1979; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1979; NO 4; PP. 255-258; BIBL. 13 REF.Article

ON THE INTERPRETATION OF PHOTOCONDUCTIVITY SPECTRA OF GAAS DOPED WITH DEEP TRAPS.INSTONE T; EAVES L.1978; J. PHYS. C; G.B.; DA. 1978; VOL. 11; NO 7; PP. L257-L259; BIBL. 4 REF.Article

THE EFFECT OF GAS-PHASE STOICHIOMETRY ON DEEP LEVELS IN VAPOR-GROWN GAAS.MILLER MD; OLSEN GH; ETTENBERG M et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 8; PP. 538-540; BIBL. 13 REF.Article

DEEP LEVELS IN ZNSE/GAAS HETEROJUNCTIONSSHIRAKAWA Y; KUKIMOTO H.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 5859-5863; BIBL. 18 REF.Article

DIFFUSION ELASTIQUE DE LA LUMIERE PAR DES CENTRES D'IMPURETE PROFONDS DANS LES SEMICONDUCTEURSBALTENKOV AS; GILERSON VB.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 2; PP. 242-248; BIBL. 16 REF.Article

DER EXPERIMENTELLE NACHWEIS TIEFER STOERSTELLEN IN RAUMLADUNGSZONEN VON HALBLEITERKRISTALLEN = LA PREUVE EXPERIMENTALE DE DEFAUTS PROFONDS DANS LES ZONES DE CHARGE D'ESPACE DE CRISTAUX SEMICONDUCTEURSBREITENSTEIN O.1979; WISSENSCH. Z. KARL-MARX-UNIV. LEIPZIG, MATH. NATURWISSENSCH. REIHE; DDR; DA. 1979; VOL. 28; NO 5; PP. 511-523; BIBL. 14 REF.Article

INVESTIGATION OF DEEP TRAPS IN GAAS BY A CAPACITIVE METHOD.MITONNEAU A.1976; PHILIPS RES. REP.; NETHERL.; DA. 1976; VOL. 31; NO 3; PP. 244-256; BIBL. 15 REF.Article

FAR-IR PHOTOCONDUCTIVITY IN SILICON DOPED WITH SHALLOW DONOR IMPURITIES.NORTON P.sdIN: OPT. PHENOM. INFRARED MATER. TOP. MEET. DIG. TECH. PAPERS; ANNAPOLIS, MD.; 1976; S.L.; DA. S.D.; PP. TH C1.1-TH C1.3; BIBL. 8 REF.Conference Paper

HYDROGENATION INDUCED IMPROVEMENT IN ELECTRONIC PROPERTIES OF HETEROEPITAXIAL SILICON-ON-SAPPHIREJASTRZEBSKI L; LAGOWSKI J; GULLEN GW et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 8; PP. 713-716; BIBL. 10 REF.Article

EXCITED STATES AT DEEP CENTERS IN SI:S AND SI:SEGRIMMEISS HG; SKARSTAM B.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 4; PP. 1947-1960; BIBL. 35 REF.Article

MEASUREMENT OF SPACE CHARGE GENERATION-RECOMBINATION CURRENT IN HG_1-XCD_XTE PHOTODIODES BY DEEP LEVEL TRANSIENT SPECTROSCOPYPOLLA DL; REINE MB; SOOD AK et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 8; PP. 719-723; BIBL. 15 REF.Article

A SIMPLE METHOD OF EVALUATION OF TSC MEASUREMENTSKLIER E.1981; PHYS. STATUS SOLIDI(A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 67; NO 2; PP. K151-K154; BIBL. 5 REF.Article

DEEP LEVELS IN SEMICONDUCTORSJAROS M.1980; ADV. PHYS.; ISSN 0001-8732; GBR; DA. 1980; VOL. 29; NO 3; PP. 409-525; BIBL. 6 P.Article

CONSTANT-CAPACITANCE DLTS MEASUREMENT OF DEFECT-DENSITY PROFILES IN SEMICONDUCTORSJOHNSON NM; BARTELINK DJ; GOLD RB et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 4828-4833; BIBL. 23 REF.Article

DEEP LEVEL TRANSIENT SPECTROSCOPY FOR DIODES WITH LARGE LEAKAGE CURRENTSDAY DS; HELIX MJ; HESS K et al.1979; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1979; VOL. 50; NO 12; PP. 1571-1573; BIBL. 3 REF.Article